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M58LW032D
32 Mbit (4Mb x8, 2Mb x16, Uniform Block) 3V Supply Flash Memory
FEATURES SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE - VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
s
ACCESS TIME - Random Read 90ns,110ns - Page Mode Read 90ns/25ns, 110ns/25ns
TSOP56 (N) 14 x 20 mm
s
PROGRAMMING TIME - 16 Word Write Buffer - 12s Word effective programming time
TBGA
s
32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS ENHANCED SECURITY - Block Protection/ Unprotection - VPEN signal for Program Erase Enable - 128 bit Protection Register with 64 bit Unique Code in OTP area
TBGA64 (ZA) 10 x 13 mm
s
s s s s
PROGRAM and ERASE SUSPEND 128 bit PROTECTION REGISTER COMMON FLASH INTERFACE 100, 000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Device Code M58LW032D: 0016h
s
September 2003
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TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 3. TSOP56 Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 4. TBGA64 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 5. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 7 8 9
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Input (A0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Address Inputs (A1-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Data Inputs/Outputs (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Chip Enables (E0, E1, E2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reset/Power-Down (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Status/(Ready/Busy) (STS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Program/Erase Enable (VPEN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VDD Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VDDQ Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VSSQ Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 2. Device Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 3. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 . . . . 12 . . . . 12 . . . . 12 . . . . 12 . . . . 12 . . . 12
READ MODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read Memory Array Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read Query Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Clear Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Word/Byte Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Write to Buffer and Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Block Protect Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Blocks Unprotect Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Configure STS Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 5. Configuration Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 6. Read Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 6. Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 7. Word-Wide Read Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Table 8. Byte-Wide Read Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 9. Program, Erase Times and Program Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . 20 STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Program/Erase Controller Status (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Erase Suspend Status (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Erase Status (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Program Status (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 VPEN Status (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Program Suspend Status (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Block Protection Status (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Reserved (SR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 10. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 11. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Table 12. Operating and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 7. AC Measurement Input Output Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 8. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 13. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 14. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 9. Bus Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 15. Bus Read AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 10. Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 16. Page Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 11. Write AC Waveform, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 17. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 12. Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 18. Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 13. Reset, Power-Down and Power-Up AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 19. Reset, Power-Down and Power-Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25 25 25 25 26 27 27 28 28 29 29 30 30 31 31
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PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Figure 14. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Outline . . . . . . . Table 20. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Mechanical Data Figure 15. TBGA64 - 10x13mm, 8 x 8 ball array 1mm pitch, Package Outline . . . . . . . . . . . . . . . Table 21. TBGA64 - 10x13mm, 8 x 8 ball array, 1 mm pitch, Package Mechanical Data . . . . . . . 32 32 33 33
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 APPENDIX A. BLOCK ADDRESS TABLE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 23. Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 APPENDIX B. COMMON FLASH INTERFACE - CFI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 24. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 25. CFI - Query Address and Data Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 26. CFI - Device Voltage and Timing Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 27. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 28. Block Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 29. Extended Query information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 36 37 37 38 39
APPENDIX C. FLOW CHARTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Figure 16. Write to Buffer and Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . Figure 17. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . Figure 18. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . Figure 20. Block Protect Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 21. Block Unprotect Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 22. Protection Register Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . Figure 23. Command Interface and Program Erase Controller Flowchart (a) . . . . . . . . . . . . . . . . Figure 24. Command Interface and Program Erase Controller Flowchart (b) . . . . . . . . . . . . . . . . Figure 25. Command Interface and Program Erase Controller Flowchart (c). . . . . . . . . . . . . . . . 40 41 42 43 44 45 46 47 48 49
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Table 30. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
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SUMMARY DESCRIPTION The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. The memory is divided into 32 blocks of 1Mbit that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a Program or Erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The Write Buffer allows the microprocessor to program from 1 to 16 Words in parallel, both speeding up the programming and freeing up the microprocessor to perform other work. A Word Program command is available to program a single word. Erase can be suspended in order to perform either Read or Program in any other block and then resumed. Program can be suspended to Read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The M58LW032D has several security features to increase data protection. s Block Protection, where each block can be individually protected against program or erase
operations. All blocks are protected during power-up. The protection of the blocks is nonvolatile; after power-up the protection status of each block is restored to the state when power was last removed. s Program Erase Enable input VPEN, program or erase operations are not possible when the Program Erase Enable input VPEN is low. s 128 bit Protection Register, divided into two 64 bit segments: the first contains a unique device number written by ST, the second is user programmable. The user programmable segment can be protected. The Reset/Power-Down pin is used to apply a Hardware Reset to the enabled memory and to set the device in power-down mode. The device features an Auto Low Power mode. If the bus becomes inactive during read operations, the device automatically enters Auto Low Power mode. In this mode the power consumption is reduced to the Auto Low Power supply current. The STS signal is an open drain output that can be used to identify the Program/Erase Controller status. It can be configured in two modes: Ready/ Busy mode where a static signal indicates the status of the P/E.C, and Status mode where a pulsing signal indicates the end of a Program or Block Erase operation. In Status mode it can be used as a system interrupt signal, useful for saving CPU time. The memory is available in TSOP56 (14 x 20 mm) and TBGA64 (10x13mm, 1mm pitch) packages.
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Figure 2. Logic Diagram
VDD VDDQ
Table 1. Signal Names
A0 A1-A21 BYTE Address input (used in X8 mode only) Address inputs Byte/Word Organization Select Data Inputs/Outputs Chip Enable Chip Enable Chip Enable Output Enable Reset/Power-Down Status/(Ready/Busy) Program/Erase Enable Write Enable Supply Voltage Input/Output Supply Voltage Ground Input/Output Ground Not Connected Internally Do Not Use
22 A0-A21 VPEN 16 BYTE W E0 E1 E2 M58LW032D DQ0-DQ15 STS
DQ0-DQ15 E0 E1 E2 G RP STS VPEN W VDD
G RP
VDDQ VSS VSSQ
VSS VSSQ
AI06234b
NC DU
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Figure 3. TSOP56 Connections
NC E1 A21 A20 A19 A18 A17 A16 VDD A15 A14 A13 A12 E0 VPEN RP A11 A10 A9 A8 VSS A7 A6 A5 A4 A3 A2 A1
1
56
NC W G STS DQ15 DQ7 DQ14 DQ6 VSS DQ13 DQ5 DQ12 DQ4 VDDQ VSSQ DQ11 DQ3 DQ10 DQ2 VDD DQ9 DQ1 DQ8 DQ0 A0 BYTE NC E2
AI06235
14 43 M58LW032D 15 42
28
29
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Figure 4. TBGA64 Connections (Top view through package)
1
2
3
4
5
6
7
8
A
A1
A6
A8
VPEN
A13
VDD
A18
NC
B
A2
VSS
A9
E0
A14
DU
A19
E1
C
A3
A7
A10
A12
A15
DU
A20
A21
D
A4
A5
A11
RP
DU
DU
A16
A17
E
DQ8
DQ1
DQ9
DQ3
DQ4
DU
DQ15
STS
F
BYTE
DQ0
DQ10
DQ11
DQ12
DU
DU
G
G
NC
A0
DQ2
VDDQ
DQ5
DQ6
DQ14
W
H
E2
DU
VDD
VSSQ
DQ13
VSS
DQ7
NC
AI06236b
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Figure 5. Block Addresses
Byte (x8) Bus Width 3FFFFFh 3E0000h 3DFFFFh 3C0000h Total of 32 1 Mbit Blocks 1FFFFFh 1F0000h 1EFFFFh 1E0000h
Word (x16) Bus Width
1 Mbit or 128 KBytes 1 Mbit or 128 KBytes
1 Mbit or 64 KWords 1 Mbit or 64 KWords
03FFFFh 020000h 01FFFFh 000000h
1 Mbit or 128 KBytes 1 Mbit or 128 KBytes
01FFFFh 010000h 00FFFFh 000000h
1 Mbit or 64 KWords 1 Mbit or 64 KWords
AI06238b
Note: Also see Appendix A, Table 23 for a full listing of the Block Addresses
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SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram and Table 1, Signal Names, for a brief overview of the signals connected to this device. Address Input (A0). The A0 address input is used to select the higher or lower Byte in X8 mode. It is not used in X16 mode (where A1 is the Lowest Significant bit). Address Inputs (A1-A21). The Address Inputs are used to select the cells to access in the memory array during Bus Read operations either to read or to program data to. During Bus Write operations they control the commands sent to the Command Interface of the Program/Erase Controller. The device must be enabled (refer to Table 2, Device Enable) when selecting the addresses. The address inputs are latched on the rising edge of Write Enable or on the first edge of Chip Enables E0, E1 or E2 that disable the device, whichever occurs first. Data Inputs/Outputs (DQ0-DQ15). The Data Inputs/Outputs output the data stored at the selected address during a Bus Read operation, or are used to input the data during a program operation. During Bus Write operations they represent the commands sent to the Command Interface of the Program/Erase Controller. When used to input data or Write commands they are latched on the rising edge of Write Enable or the first edge of Chip Enables E0, E1 or E2 that disable the device, whichever occurs first. When the device is enabled and Output Enable is low, VIL (refer to Table 2, Device Enable), the data bus outputs data from the memory array, the Electronic Signature, the Block Protection status, the CFI Information or the contents of the Status Register. The data bus is high impedance when the device is deselected, Output Enable is high, VIH, or the Reset/Power-Down signal is low, VIL. When the Program/Erase Controller is active the Ready/ Busy status is given on DQ7. Chip Enables (E0, E1, E2). The Chip Enable inputs E0, E1 and E2 activate the memory control logic, input buffers, decoders and sense amplifiers. The device is selected at the first edge of Chip Enables E0, E1 or E2 that enable the device and deselected at the first edge of Chip Enables E0, E1 or E2 that disable the device. Refer to Table 2, Device Enable for more details. When the Chip Enable inputs deselect the memory, power consumption is reduced to the Standby level, IDD1. Output Enable (G). The Output Enable, G, gates the outputs through the data output buffers during a read operation. When Output Enable, G, is at VIH the outputs are high impedance.
Write Enable (W). The Write Enable input, W, controls writing to the Command Interface, Input Address and Data latches. Both addresses and data can be latched on the rising edge of Write Enable. Reset/PowerReset/Power-Down (RP). The Down pin can be used to apply a Hardware Reset to the memory. A Hardware Reset is achieved by holding Reset/ Power-Down Low, VIL, for at least tPLPH. When Reset/Power-Down is Low, VIL, the Status Register information is cleared and the power consumption is reduced to power-down level. The device is deselected and outputs are high impedance. If Reset/Power-Down goes low, VIL,during a Block Erase, a Write to Buffer and Program or a Block Protect/Unprotect the operation is aborted and the data may be corrupted. In this case the STS pin stays low, VIL, for a maximum timing of tPLPH + tPHBH, until the completion of the Reset/Power-Down pulse. After Reset/Power-Down goes High, VIH, the memory will be ready for Bus Read and Bus Write operations after tPHQV. Note that STS does not fall during a reset, see Ready/Busy Output section. In an application, it is recommended to associate Reset/Power-Down pin, RP, with the reset signal of the microprocessor. Otherwise, if a reset operation occurs while the memory is performing an Erase or Program operation, the memory may output the Status Register information instead of being initialized to the default Asynchronous Random Read. Byte/Word Organization Select (BYTE). The Byte/Word Organization Select pin is used to switch between the x8 and x16 bus widths of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in x8 mode, when it is High, VIH, the memory is in x16 mode. Status/(Ready/Busy) (STS). The STS signal is an open drain output that can be used to identify the Program/Erase Controller status. It can be configured in two modes: s Ready/Busy - the pin is Low, VOL, during Program and Erase operations and high impedance when the memory is ready for any Read, Program or Erase operation. s Status - the pin gives a pulsing signal to indicate the end of a Program or Block Erase operation. After power-up or reset the STS pin is configured in Ready/Busy mode. The pin can be configured for Status mode using the Configure STS command. When the Program/Erase Controller is idle, or suspended, STS can float High through a pull-up re-
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sistor. The use of an open-drain output allows the STS pins from several memories to be connected to a single pull-up resistor (a Low will indicate that one, or more, of the memories is busy). STS is not Low during a reset unless the reset was applied when the Program/Erase controller was active. Program/Erase Enable (VPEN). The Program/ Erase Enable input, VPEN, is used to protect all blocks, preventing Program and Erase operations from affecting their data. Program/Erase Enable must be kept High during all Program/Erase Controller operations, otherwise the operations is not guaranteed to succeed and data may become corrupt. VDD Supply Voltage. VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (Read, Program and Erase). Table 2. Device Enable
E2 VIL VIL VIL VIL VIH VIH VIH VIH E1 VIL VIL VIH VIH VIL VIL VIH VIH E0 VIL VIH VIL VIH VIL VIH VIL VIH Device Enabled Disabled Disabled Disabled Enabled Enabled Enabled Disabled
VDDQ Supply Voltage. VDDQ provides the power supply to the I/O pins and enables all Outputs to be powered independently from VDD. VDDQ can be tied to VDD or can use a separate supply. It is recommended to power-up and power-down VDD and VDDQ together to avoid any condition that would result in data corruption. VSS Ground. Ground, VSS, is the reference for the core power supply. It must be connected to the system ground. VSSQ Ground. VSSQ ground is the reference for the input/output circuitry driven by VDDQ. VSSQ must be connected to VSS. Note: Each device in a system should have VDD and VDDQ decoupled with a 0.1F ceramic capacitor close to the pin (high frequency, inherently low inductance capacitors should be as close as possible to the package). See Figure 8, AC Measurement Load Circuit.
Note: For single device operations, E2 and E1 can be connected to VSS.
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BUS OPERATIONS There are five standard bus operations that control the memory. Each of these is described in this section, see Tables 3, Bus Operations, for a summary. On Power-up or after a Hardware Reset the memory defaults to Read Array mode (Page Read). Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Bus Read. Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register, the Common Flash Interface and the Block Protection Status. A valid bus operation involves setting the desired address on the Address inputs, enabling the device (refer to Table 2, Device Enable), applying a Low signal, VIL, to Output Enable and keeping Write Enable High, VIH. The data read depends on the previous command written to the memory (see Command Interface section). See Figure 9, Bus Read AC Waveforms, and Table 15, Bus Read AC Characteristics, for details of when the output becomes valid. Bus Write. Bus Write operations write Commands to the memory or latch addresses and input data to be programmed. A valid Bus Write operation begins by setting the desired address on the Address Inputs and enabling the device (refer to Chip Enable section).
The Address Inputs are latched by the Command Interface on the rising edge of Write Enable or the first edge of E0, E1 or E2 that disables the device (refer to Table 2, Device Enable). The Data Input/Outputs are latched by the Command Interface on the rising edge of Write Enable or the first edge of E0, E1 or E2 that disables the device whichever occurs first. Output Enable must remain High, VIH, during the Bus Write operation. See Figures 11, and 12, Write AC Waveforms, and Tables 17 and 18, Write and Chip Enable Controlled Write AC Characteristics, for details of the timing requirements. Output Disable. The Data Inputs/Outputs are high impedance when the Output Enable is at VIH. Power-Down. The memory is in Power-Down mode when Reset/Power-Down, RP, is Low. The power consumption is reduced to the Power-Down level, IDD2, and the outputs are high impedance, independent of Chip Enable, Output Enable or Write Enable. Standby. Standby disables most of the internal circuitry, allowing a substantial reduction of the current consumption. The memory is in standby when Chip Enable is at VIH. The power consumption is reduced to the standby level IDD1 and the outputs are set to high impedance, independently of the Output Enable or Write Enable inputs. If Chip Enable switches to VIH during a program or erase operation, the device enters Standby mode when finished.
Table 3. Bus Operations
Bus Operation Bus Read Bus Write Output Disable Power-Down Standby E0, E1 or E2 VIL VIL VIL X VIH G VIL VIH VIH X X W VIH VIL VIH X X RP VIH VIH VIH VIL VIH A1-A21 (x16) A0-A21 (x8) Address Address X X X DQ0-DQ15 (x16) DQ0-DQ7 (x8)(1) Data Output Data Input High Z High Z High Z
Note: 1. DQ8-DQ15 are High Z in x8 mode. 2. X = Don't Care VIL or VIH .
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READ MODES Read operations in the M58LW032D are asynchronous. The device outputs the data corresponding to the address latched, that is the memory array, Status Register, Common Flash Interface, Electronic Signature or Block Protection Status depending on the command issued. During read operations, if the bus is inactive for a time equivalent to tAVQV, the device automatically enters Auto Low Power mode. In this mode the internal supply current is reduced to the Auto Low Power supply current, IDD5. The Data Inputs/Outputs will still output data if a Bus Read operation is in progress. Read operations can be performed in two different ways, Random Read (where each Bus Read operation accesses a different Page) and Page Read.
In Page Read mode a Page of data is internally read and stored in a Page Buffer. Each memory page is a 4 Words or 8 Bytes and has the same A3-A21. In x8 mode only A0, A1 and A2 may change, in x16 mode only A1 and A2 may change. The first read operation within the Page has the normal access time (tAVQV), subsequent reads within the same Page have much shorter access times (tAVQV1). If the Page changes then the normal, longer timings apply again. See Figure 10, Page Read AC Waveforms and Table 16, Page Read AC Characteristics for details on when the outputs become valid.
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COMMAND INTERFACE All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. The Commands are summarized in Table 4, Commands. Refer to Table 4 in conjunction with the text descriptions below. After power-up or a Reset operation the memory enters Read mode. Read Memory Array Command. The Read Memory Array command is used to return the memory to Read mode. One Bus Write cycle is required to issue the Read Memory Array command and return the memory to Read mode. Once the command is issued the memory remains in Read mode until another command is issued. From Read mode Bus Read operations will access the memory array. After power-up or a reset the memory defaults to Read Array mode (Page Read). While the Program/Erase Controller is executing a Program, Erase, Block Protect, Blocks Unprotect or Protection Register Program operation the memory will not accept the Read Memory Array command until the operation completes. Read Electronic Signature Command. The Read Electronic Signature command is used to read the Manufacturer Code, the Device Code, the Block Protection Status and the Protection Register. One Bus Write cycle is required to issue the Read Electronic Signature command. Once the command is issued subsequent Bus Read operations read the Manufacturer Code, the Device Code, the Block Protection Status or the Protection Register until another command is issued. Refer to Table 6, Read Electronic Signature, Tables 7 and 8, Word and Byte-wide Read Protection Register and Figure 6, Protection Register Memory Map for information on the addresses. Read Query Command. The Read Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. One Bus Write cycle is required to issue the Read Query Command. Once the command is issued subsequent Bus Read operations read from the Common Flash Interface Memory Area. See Appendix B, Tables 24, 25, 26, 27, 28 and 29 for details on the information contained in the Common Flash Interface (CFI) memory area. Read Status Register Command. The Read Status Register command is used to read the Status Register. One Bus Write cycle is required to issue the Read Status Register command. Once the command is issued subsequent Bus Read operations read the Status Register until another command is issued.
The Status Register information is present on the output data bus (DQ1-DQ7) when the device is enabled and Output Enable is Low, VIL. See the section on the Status Register and Table 10 for details on the definitions of the Status Register bits Clear Status Register Command. The Clear Status Register command can be used to reset bits SR1, SR3, SR4 and SR5 in the Status Register to `0'. One Bus Write is required to issue the Clear Status Register command. The bits in the Status Register are sticky and do not automatically return to `0' when a new Write to Buffer and Program, Erase, Block Protect, Block Unprotect or Protection Register Program command is issued. If any error occurs then it is essential to clear any error bits in the Status Register by issuing the Clear Status Register command before attempting a new Program, Erase or Resume command. Block Erase Command. The Block Erase command can be used to erase a block. It sets all of the bits in the block to `1'. All previous data in the block is lost. If the block is protected then the Erase operation will abort, the data in the block will not be changed and the Status Register will output the error. Two Bus Write operations are required to issue the command; the second Bus Write cycle latches the block address and starts the Program/Erase Controller. Once the command is issued subsequent Bus Read operations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Erase operation the memory will only accept the Read Status Register command and the Program/Erase Suspend command. All other commands will be ignored. Typical Erase times are given in Table 9. See Appendix C, Figure 18, Block Erase Flowchart and Pseudo Code, for a suggested flowchart on using the Block Erase command. Word/Byte Program Command. The Word/ Byte Program command is used to program a single Word or Byte in the memory array. Two Bus Write operations are required to issue the command; the first write cycle sets up the Word Program command, the second write cycle latches the address and data to be programmed, and starts the Program/Erase Controller. If the block being programmed is protected an error will be set in the Status Register and the operation will abort without affecting the data in the memory array. The block must be unprotected using the Blocks Unprotect command or by using the
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Blocks Temporary Unprotect feature of the Reset/ Power-Down pin, RP. Write to Buffer and Program Command. The Write to Buffer and Program command is used to program the memory array. Up to 16 Words/32 Bytes can be loaded into the Write Buffer and programmed into the memory. Each Write Buffer has the same A5-A21 addresses. In Byte-wide mode only A0-A4 may change in Word-wide mode only A1-A4 may change, in . Four successive steps are required to issue the command. 1. One Bus Write operation is required to set up the Write to Buffer and Program Command. Issue the set up command with the selected memory Block Address where the program operation should occur (any address in the block where the values will be programmed can be used). Any Bus Read operations will start to output the Status Register after the 1st cycle. 2. Use one Bus Write operation to write the same block address along with the value N on the Data Inputs/Output, where N+1 is the number of Words/Bytes to be programmed. 3. Use N+1 Bus Write operations to load the address and data for each Word into the Write Buffer. See the constraints on the address combinations listed below. The addresses must have the same A5-A21. 4. Finally, use one Bus Write operation to issue the final cycle to confirm the command and start the Program operation. Invalid address combinations or failing to follow the correct sequence of Bus Write cycles will set an error in the Status Register and abort the operation without affecting the data in the memory array. The Status Register should be cleared before re-issuing the command. If the block being programmed is protected an error will be set in the Status Register and the operation will abort without affecting the data in the memory array. The block must be unprotected using the Blocks Unprotect command. See Appendix C, Figure 16, Write to Buffer and Program Flowchart and Pseudo Code, for a suggested flowchart on using the Write to Buffer and Program command. Program/Erase Suspend Command. The Program/Erase Suspend command is used to pause a Word/Byte Program, Write to Buffer and Program or Erase operation. The command will only be accepted during a Program or an Erase operation. It can be issued at any time during an Erase operation but will only be accepted during a Word Program or Write to Buffer and Program command if the Program/Erase Controller is running. One Bus Write cycle is required to issue the Program/Erase Suspend command and pause the Program/Erase Controller. Once the command is issued it is necessary to poll the Program/Erase Controller Status bit (SR7) to find out when the Program/Erase Controller has paused; no other commands will be accepted until the Program/ Erase Controller has paused. After the Program/ Erase Controller has paused, the memory will continue to output the Status Register until another command is issued. During the polling period between issuing the Program/Erase Suspend command and the Program/ Erase Controller pausing it is possible for the operation to complete. Once the Program/Erase Controller Status bit (SR7) indicates that the Program/Erase Controller is no longer active, the Program Suspend Status bit (SR2) or the Erase Suspend Status bit (SR6) can be used to determine if the operation has completed or is suspended. For timing on the delay between issuing the Program/Erase Suspend command and the Program/Erase Controller pausing see Table 9. During Program/Erase Suspend the Read Memory Array, Read Status Register, Read Electronic Signature, Read Query and Program/Erase Resume commands will be accepted by the Command Interface. Additionally, if the suspended operation was Erase then the Write to Buffer and Program, and the Program Suspend commands will also be accepted. When a program operation is completed inside a Block Erase Suspend the Read Memory Array command must be issued to reset the device in Read mode, then the Erase Resume command can be issued to complete the whole sequence. Only the blocks not being erased may be read or programmed correctly. See Appendix C, Figure 17, Program Suspend & Resume Flowchart and Pseudo Code, and Figure 19, Erase Suspend & Resume Flowchart and Pseudo Code, for suggested flowcharts on using the Program/Erase Suspend command. Program/Erase Resume Command. The Program/Erase Resume command can be used to restart the Program/Erase Controller after a Program/Erase Suspend operation has paused it. One Bus Write cycle is required to issue the Program/Erase Resume command. Once the command is issued subsequent Bus Read operations read the Status Register. Block Protect Command. The Block Protect command is used to protect a block and prevent Program or Erase operations from changing the data in it. Two Bus Write cycles are required to issue the Block Protect command; the second Bus Write cycle latches the block address and starts the Program/Erase Controller. Once the command is issued subsequent Bus Read operations read
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the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Block Protect operation the memory will only accept the Read Status Register command. All other commands will be ignored. Typical Block Protection times are given in Table 9. The Block Protection bits are non-volatile, once set they remain set through reset and powerdown/power-up. They are cleared by a Blocks Unprotect command. See Appendix C, Figure 20, Block Protect Flowchart and Pseudo Code, for a suggested flowchart on using the Block Protect command. Blocks Unprotect Command. The Blocks Unprotect command is used to unprotect all of the blocks. Two Bus Write cycles are required to issue the Blocks Unprotect command; the second Bus Write cycle starts the Program/Erase Controller. Once the command is issued subsequent Bus Read operations read the Status Register. See the section on the Status Register for details on the definitions of the Status Register bits. During the Block Unprotect operation the memory will only accept the Read Status Register command. All other commands will be ignored. Typical Block Protection times are given in Table 9. See Appendix C, Figure 21, Block Unprotect Flowchart and Pseudo Code, for a suggested flowchart on using the Block Unprotect command. Protection Register Program Command. The Protection Register Program command is used to Program the 64 bit user segment of the Protection Register. Two write cycles are required to issue the Protection Register Program command. s The first bus cycle sets up the Protection Register Program command. s The second latches the Address and the Data to be written to the Protection Register and starts the Program/Erase Controller. Read operations output the Status Register content after the programming has started. The user-programmable segment can be locked by programming bit 1 of the Protection Register Lock location to `0' (see Table 7 and x for Wordwide and Byte-wide protection addressing). Bit 0 of the Protection Register Lock location locks the factory programmed segment and is programmed to `0' in the factory. The locking of the Protection Register is not reversible, once the lock bits are programmed no further changes can be made to the values stored in the Protection Register, see Figure 6, Protection Register Memory Map. Attempting to program a previously protected Protection Register will result in a Status Register error. The Protection Register Program cannot be suspended. See Appendix C, Figure 22, Protection Register Program Flowchart and Pseudo Code, for the flowchart for using the Protection Register Program command. Configure STS Command. The Configure STS command is used to configure the Status/(Ready/Busy) pin. After power-up or reset the STS pin is configured in Ready/Busy mode. The pin can be configured in Status mode using the Configure STS command (refer to Status/(Ready/Busy) section for more details. Two write cycles are required to issue the Configure STS command. s The first bus cycle sets up the Configure STS command. s The second specifies one of the four possible configurations (refer to Table 5, Configuration Codes): - Ready/Busy mode - Pulse on Erase complete mode - Pulse on Program complete mode - Pulse on Erase or Program complete mode The device will not accept the Configure STS command while the Program/Erase controller is busy or during Program/Erase Suspend. When STS pin is pulsing it remains Low for a typical time of 250ns. Any invalid Configuration Code will set an error in the Status Register.
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Table 4. Commands
Cycles Bus Operations 1st Cycle Op. Addr. Data Write Write Write Write Write Write Write X X X X X X X BA X X X X X X FFh 90h 70h 98h 50h 20h 40h 10h E8h B0h D0h 60h 60h C0h B8h Write Write Write Write BA X PRA X 01h D0h PRD CC Write Write Write BA PA BA D0 PD N Write PA PD Write X D0h Op. Read Read Read Read 2nd Cycle Addr. RA IDA(2) X QA(3) Data RD IDD(2) SRD QD(3) Subsequent Op. Final Command
Addr. Data Op. Addr. Data
Read Memory Array Read Electronic Signature Read Status Register Read Query Clear Status Register Block Erase Word/Byte Program Write to Buffer and Program Program/Erase Suspend Program/Erase Resume Block Protect Blocks Unprotect Protection Register Program Configure STS command
2 2 2 2 1 2 2
4 + N Write 1 1 2 2 2 2 Write Write Write Write Write Write
Note: 1. X Don't Care; RA Read Address, RD Read Data, IDA Identifier Address, IDD Identifier Data, SRD Status Register Data, PA Program Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, PRA Protection register address, PRD Protection Register Data, CC Configuration Code. 2. For Identifier addresses and data refer to Table 6, Read Electronic Signature. 3. For Query Address and Data refer to Appendix B, CFI.
Table 5. Configuration Codes
Configuration Code DQ1 DQ2 Mode STS Pin VOL during P/E operations Hi-Z when the memory is ready Description The STS pin is Low during Program and Erase operations and high impedance when the memory is ready for any Read, Program or Erase operation. Supplies a system interrupt pulse at the end of a Block Erase operation. Pulse Low then High when operation completed(2) Supplies a system interrupt pulse at the end of a Program operation. Supplies a system interrupt pulse at the end of a Block Erase or Program operation.
00h
0
0
Ready/Busy
01h
0
1
Pulse on Erase complete Pulse on Program complete Pulse on Erase or Program complete
02h
1
0
03h
1
1
Note: 1. DQ2-DQ7 are reserved 2. When STS pin is pulsing it remains Low for a typical time of 250ns.
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Table 6. Read Electronic Signature
Code Manufacturer Code x16 x8 Device Code x16 x8 Block Protection Status x16 Protection Register x8, x16 000080h(2) SBA(1)+02h 000001h 0016h 00h (Block Unprotected) 01h (Block Protected) 0000h (Block Unprotected) 0001h (Block Protected) PRD(1) Bus Width x8 000000h 0020h 16h Address (A21-A1)(3) Data (DQ15-DQ0) 20h
Note: 1. SBA is the Start Base Address of each block, PRD is Protection Register Data. 2. Base Address, refer to Figure 6 and Tables 7 and 8 for more information. 3. A0 is not used in Read Electronic Signature in either x8 or x16 mode. The data is always presented on the lower byte in x16 mode.
Figure 6. Protection Register Memory Map
WORD ADDRESS 88h User Programmable 85h 84h Unique device number 81h 80h Protection Register Lock 1 0
AI05501
Table 7. Word-Wide Read Protection Register
Word Lock 0 1 2 3 4 5 6 7 Use Factory, User Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) User User User User A8 1 1 1 1 1 1 1 1 1 A7 0 0 0 0 0 0 0 0 0 A6 0 0 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 0 1 A3 0 0 0 0 1 1 1 1 0 A2 0 0 1 1 0 0 1 1 0 A1 0 1 0 1 0 1 0 1 0
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Table 8. Byte-Wide Read Protection Register
Word Lock Lock 0 1 2 3 4 5 6 7 8 9 A B C D E F Use Factory, User Factory, User Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) Factory (Unique ID) User User User User User User User User A8 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A7 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A6 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A5 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A4 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 A3 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 A2 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 A1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0
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Table 9. Program, Erase Times and Program Erase Endurance Cycles
M58LW032D Parameters Min Block (1Mb) Erase Chip Program (Write to Buffer) Chip Erase Time Program Write Buffer Word/Byte Program Time (Word/Byte Program command) Program Suspend Latency Time Erase Suspend Latency Time Block Protect Time Blocks Unprotect Time Program/Erase Cycles (per block) Data Retention
Note: 1. 2. 3. 4. 5.
Typ(1,2) 1.2 24 37 192 (3) 16 1 1 18 0.75
Max(2) 4.8(4) 72(4) 110 (4) 576 (4) 48 (4) 20 (5) 25 (5) 30 (5) 1.2 (5)
Unit s s s s s s s s s cycles years
100,000 20
Typical values measured at room temperature and nominal voltages. Sampled, but not 100% tested. Effective byte programming time 6s, effective word programming time 12s. Maximum value measured at worst case conditions for both temperature and VDD after 100,000 program/erase cycles. Maximum value measured at worst case conditions for both temperature and VDD.
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STATUS REGISTER The Status Register provides information on the current or previous Program, Erase, Block Protect or Blocks Unprotect operation. The various bits in the Status Register convey information and errors on the operation. They are output on DQ7-DQ0. To read the Status Register the Read Status Register command can be issued. The Status Register is automatically read after Program, Erase, Block Protect, Blocks Unprotect and Program/Erase Resume commands. The Status Register can be read from any address. The contents of the Status Register can be updated during an Erase or Program operation by toggling the Output Enable pin or by dis-activating and then reactivating the device (refer to Table 2, Device Enable). Status Register bits SR5, SR4, SR3 and SR1 are associated with various error conditions and can only be reset with the Clear Status Register command. The Status Register bits are summarized in Table 10, Status Register Bits. Refer to Table 10 in conjunction with the following text descriptions. Program/Erase Controller Status (SR7). The Program/Erase Controller Status bit indicates whether the Program/Erase Controller is active or inactive. When the Program/Erase Controller Status bit is Low, VOL, the Program/Erase Controller is active and all other Status Register bits are High Impedance; when the bit is High, VOH, the Program/ Erase Controller is inactive. The Program/Erase Controller Status is Low immediately after a Program/Erase Suspend command is issued until the Program/Erase Controller pauses. After the Program/Erase Controller pauses the bit is High. During Program, Erase, Block Protect and Blocks Unprotect operations the Program/Erase Controller Status bit can be polled to find the end of the operation. The other bits in the Status Register should not be tested until the Program/Erase Controller completes the operation and the bit is High. After the Program/Erase Controller completes its operation the Erase Status, Program Status and Block Protection Status bits should be tested for errors. Erase Suspend Status (SR6). The Erase Suspend Status bit indicates that an Erase operation has been suspended and is waiting to be resumed. The Erase Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive); after a Program/Erase Suspend command is issued the memory may still complete the operation rather than entering the Suspend mode. When the Erase Suspend Status bit is Low, VOL, the Program/Erase Controller is active or has com-
pleted its operation; when the bit is High, VOH, a Program/Erase Suspend command has been issued and the memory is waiting for a Program/ Erase Resume command. When a Program/Erase Resume command is issued the Erase Suspend Status bit returns Low. Erase Status (SR5). The Erase Status bit can be used to identify if the memory has failed to verify that the block has erased correctly or that all blocks have been unprotected successfully. The Erase Status bit should be read once the Program/ Erase Controller Status bit is High (Program/Erase Controller inactive). When the Erase Status bit is Low, VOL, the memory has successfully verified that the block has erased correctly or all blocks have been unprotected successfully. When the Erase Status bit is High, VOH, the erase operation has failed. Depending on the cause of the failure other Status Register bits may also be set to High, VOH. s If only the Erase Status bit (SR5) is set High, VOH, then the Program/Erase Controller has applied the maximum number of pulses to the block and still failed to verify that the block has erased correctly or that all the blocks have been unprotected successfully. s If the failure is due to an erase or blocks unprotect with VPEN low, VOL, then VPEN Status bit (SR3) is also set High, VOH. s If the failure is due to an erase on a protected block then Block Protection Status bit (SR1) is also set High, VOH. s If the failure is due to a program or erase incorrect command sequence then Program Status bit (SR4) is also set High, VOH. Once set High, the Erase Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. Program Status (SR4). The Program Status bit is used to identify a Program or Block Protect failure. The Program Status bit should be read once the Program/Erase Controller Status bit is High (Program/Erase Controller inactive). When the Program Status bit is Low, VOL, the memory has successfully verified that the Write Buffer has programmed correctly or the block is protected. When the Program Status bit is High, VOH, the program or block protect operation has failed. Depending on the cause of the failure other Status Register bits may also be set to High, VOH. s If only the Program Status bit (SR4) is set High, VOH, then the Program/Erase Controller has applied the maximum number of pulses to the
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byte and still failed to verify that the Write Buffer has programmed correctly or that the Block is protected. s If the failure is due to a program or block protect with VPEN low, VOL, then VPEN Status bit (SR3) is also set High, VOH. s If the failure is due to a program on a protected block then Block Protection Status bit (SR1) is also set High, VOH. s If the failure is due to a program or erase incorrect command sequence then Erase Status bit (SR5) is also set High, VOH. Once set High, the Program Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. VPEN Status (SR3). The VPEN Status bit can be used to identify if a Program, Erase, Block Protection or Block Unprotection operation has been attempted when VPEN is Low, VIL. When the VPEN Status bit is Low, VOL, no Program, Erase, Block Protection or Block Unprotection operations have been attempted with VPEN Low, VIL, since the last Clear Status Register command, or hardware reset. When the VPEN Status bit is High, VOH, a Program, Erase, Block Protection or Block Unprotection operation has been attempted with VPEN Low, VIL. Once set High, the VPEN Status bit can only be reset by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program, Erase, Block Protection or Block Unprotection command is issued, otherwise the new command will appear to fail. Program Suspend Status (SR2). The Program Suspend Status bit indicates that a Program operation has been suspended and is waiting to be resumed. The Program Suspend Status should only be considered valid when the Program/Erase Controller Status bit is High (Program/Erase Controller inactive); after a Program/Erase Suspend command is issued the memory may still complete the operation rather than entering the Suspend mode. When the Program Suspend Status bit is Low, VOL, the Program/Erase Controller is active or has completed its operation; when the bit is High, VOH, a Program/Erase Suspend command has been issued and the memory is waiting for a Program/ Erase Resume command. When a Program/Erase Resume command is issued the Program Suspend Status bit returns Low. Block Protection Status (SR1). The Block Protection Status bit can be used to identify if a Program or Erase operation has tried to modify the contents of a protected block. When the Block Protection Status bit is Low, VOL, no Program or Erase operations have been attempted to protected blocks since the last Clear Status Register command or hardware reset; when the Block Protection Status bit is High, VOH, a Program (Program Status bit SR4 set High) or Erase (Erase Status bit SR5 set High) operation has been attempted on a protected block. Once set High, the Block Protection Status bit can only be reset Low by a Clear Status Register command or a hardware reset. If set High it should be reset before a new Program or Erase command is issued, otherwise the new command will appear to fail. Reserved (SR0). Bit SR0 of the Status Register is reserved. Its value should be masked.
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Table 10. Status Register Bits
OPERATION Program/Erase Controller active Write Buffer not ready Write Buffer ready Write Buffer ready in Erase Suspend Program suspended Program suspended in Erase Suspend Program/Block Protect completed successfully Program completed successfully in Erase Suspend Program/Block protect failure due to incorrect command sequence Program failure due to incorrect command sequence in Erase Suspend Program/Block Protect failure due to VPEN error Program failure due to VPEN error in Erase Suspend Program failure due to Block Protection Program failure due to Block Protection in Erase Suspend Program/Block Protect failure due to cell failure Program failure due to cell failure in Erase Suspend Erase Suspended Erase/Blocks Unprotect completed successfully Erase/Blocks Unprotect failure due to incorrect command sequence Erase/Blocks Unprotect failure due to VPEN error Erase failure due to Block Protection Erase/Blocks Unprotect failure due to failed cells in Block Configure STS error due to invalid configuration code SR7 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 1 0 0 0 1 SR6 SR5 SR4 Hi-Z Hi-Z 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 1 0 0 SR3 SR2 SR1 Result (Hex) N/A N/A 80h C0h 84h C4h 80h C0h B0h F0h 98h D8h 92h D2h 90h D0h C0h 80h B0h A8h A2h A0h B0h
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MAXIMUM RATING Stressing the device above the ratings listed in Table 11, Absolute Maximum Ratings, may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is Table 11. Absolute Maximum Ratings
Value Symbol TBIAS TSTG VIO VDD, VDDQ IOSC Parameter Min Temperature Under Bias Storage Temperature Input or Output Voltage Supply Voltage Output Short-circuit Current -40 -55 -0.6 -0.6 Max 125 150 VDDQ +0.6 5.0 100(1) C C V V mA Unit
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Note: 1. Maximum one output short-circuited at a time and for no longer than 1 second.
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DC AND AC PARAMETERS This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Measure-
ment Conditions summarized in Table 12, Operating and AC Measurement Conditions. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
M58LW032D Parameter Min Supply Voltage (VDD) Input/Output Supply Voltage (VDDQ) Ambient Temperature (TA) Load Capacitance (CL) Input Pulses Voltages Input and Output Timing Ref. Voltages Grade 1 Grade 6 2.7 2.7 0 -40 30 0 to VDDQ 0.5 VDDQ Max 3.6 3.6 70 85 V V C C pF V V Units
Figure 7. AC Measurement Input Output Waveform
Figure 8. AC Measurement Load Circuit
1.3V
1N914 VDDQ VDD VDDQ 0.5 VDDQ 0V
AI00610
3.3k DEVICE UNDER TEST CL 0.1F 0.1F CL includes JIG capacitance
AI03459
DQS
Table 13. Capacitance
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Typ 6 8 Max 8 12 Unit pF pF
Note: 1. TA = 25C, f = 1 MHz 2. Sampled only, not 100% tested.
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Table 14. DC Characteristics
Symbol ILI ILO IDD IDDO IDD1 IDD5 IDD2 IDD3 IDD4 VIL VIH VOL VOH VLKO VPENH Parameter Input Leakage Current Output Leakage Current Supply Current (Random Read) Supply Current (Page Read) Supply Current (Standby) Supply Current (Auto Low-Power) Supply Current (Reset/Power-Down) Supply Current (Program or Erase, Block Protect, Block Unprotect) Supply Current (Erase/Program Suspend) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VDD Supply Voltage (Erase and Program lockout) VPEN Supply Voltage (block erase, program and block protect) IOL = 100A IOH = -100A VDDQ -0.2 2 2.7 3.6 Test Condition 0V VIN VDDQ 0V VOUT VDDQ E = VIL, f=5MHz E = VIL, f=33MHz E = VIH, RP = VIH E = VIL, RP = VIH RP = VIL Program or Erase operation in progress E = VIH -0.5 2 Min Max 1 5 20 29 40 40 40 30 40 0.8 VDDQ + 0.5 0.2 Unit A A mA mA A A A mA A V V V V V V
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Figure 9. Bus Read AC Waveforms
tAVAV A0-A21 tELQV tELQX E2, E1, E0
(1)
VALID
tAXQX
tGLQV tGLQX G tELBL BYTE
(2)
tEHQZ tEHQX
tBLQV
tGHQZ tGHQX tBLQZ
tAVQV DQ0-DQ15 OUTPUT
AI06239b
Note: 1. VIH = Device Disabled (first edge of E0, E1 or E2), VIL = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more details. 2. BYTE can be Low or High.
Table 15. Bus Read AC Characteristics.
M58LW032D Symbol tAVAV tAVQV tAXQX tBLQV tBLQZ tEHQX tEHQZ tELBL tELQX tELQV tGHQX tGHQZ tGLQX tGLQV Parameter Address Valid to Address Valid Address Valid to Output Valid Address Transition to Output Transition Byte Low (or High) to Output Valid Byte Low (or High) to Output Hi-Z Chip Enable High to Output Transition Chip Enable High to Output Hi-Z Chip Enable Low to Byte Low (or High) Chip Enable Low to Output Transition Chip Enable Low to Output Valid Output Enable High to Output Transition Output Enable High to Output Hi-Z Output Enable Low to Output Transition Output Enable Low to Output Valid Test Condition 90 E = VIL, G = VIL E = VIL, G = VIL E = VIL, G = VIL E = VIL, G = VIL E = VIL, G = VIL G = VIL G = VIL G = VIL G = VIL G = VIL E = VIL E = VIL E = VIL E = VIL Min Max Min Max Max Min Max Max Min Max Min Max Min Max 90 90 0 1 1 0 25 10 0 90 0 15 0 25 110 110 110 0 1 1 0 25 10 0 110 0 15 0 25 ns ns ns s s ns ns ns ns ns ns ns ns ns Unit
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Figure 10. Page Read AC Waveforms
A1-A2 VALID VALID
A3-A21 tAVQV tELQV tELQX E2, E1, E0(1) tGLQV tGLQX G
VALID
tAXQX
tAVQV1 tAXQX1
tEHQZ tEHQX
tGHQZ tGHQX DQ0-DQ15 OUTPUT OUTPUT
AI06240
Note: 1. VIH = Device Disabled (first edge of E0, E1 or E2), VIL = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more details.
Table 16. Page Read AC Characteristics
M58LW032D Symbol tAXQX1 tAVQV1 Parameter Address Transition to Output Transition Address Valid to Output Valid Test Condition 90 - 110 E = VIL, G = VIL E = VIL, G = VIL Min Max 6 25 ns ns Unit
Note: For other timings see Table 15, Bus Read AC Characteristics.
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Figure 11. Write AC Waveform, Write Enable Controlled
A0-A21 tAVWH E2, E1, E0(1) tELWL G tGHWL W
VALID tWHAX
tWHEH
tWLWH
tWHWL
tWHGL
tDVWH DQ0-DQ15 INPUT tWHDX STS (Ready/Busy mode) tVPHWH VPEN
AI06241
tWHBL
Note: 1. VIH = Device Disabled (first edge of E0, E1 or E2), VIL = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more details.
Table 17. Write AC Characteristics, Write Enable Controlled
M58LW032D Symbol tAVWH tDVWH tELWL tVPHWH tWHAX tWHBL tWHDX tWHEH tGHWL tWHGL tWHWL tWLWH Parameter Address Valid to Write Enable High Data Input Valid to Write Enable High Chip Enable Low to Write Enable Low Program/Erase Enable High to Write Enable High Write Enable High to Address Transition Write Enable High to Status/(Ready/Busy) low Write Enable High to Input Transition Write Enable High to Chip Enable High Output Enable High to Write Enable Low Write Enable High to Output Enable Low Write Enable High to Write Enable Low Write Enable Low to Write Enable High E = VIL E = VIL E = VIL Test Condition 90 - 110 E = VIL E = VIL Min Min Min Min Min Max Min Min Min Min Min Min 50 50 0 0 0 500 0 0 20 35 30 70 ns ns ns ns ns ns ns ns ns ns ns ns Unit
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Figure 12. Write AC Waveforms, Chip Enable Controlled
A0-A21 tAVEH W tWLEL G tGHEL E2, E1, E0(1)
VALID tEHAX
tEHWH
tELEH
tEHEL
tEHGL
tDVEH DQ0-DQ15 INPUT tEHDX STS (Ready/Busy mode) tVPHEH VPEN
AI06242
tEHBL
Note: 1. VIH = Device Disabled (first edge of E0, E1 or E2), VIL = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more details.
Table 18. Write AC Characteristics, Chip Enable Controlled.
M58LW032D Symbol tAVEH tDVEH tWLEL tVPHEH tEHAX tEHBL tEHDX tEHWH tGHEL tEHGL tEHEL tELEH Parameter Address Valid to Chip Enable High Data Input Valid to Chip Enable High Write Enable Low to Chip Enable Low Program/Erase Enable High to Chip Enable High Chip Enable High to Address Transition Chip Enable High to Status/(Ready/Busy) low Chip Enable High to Input Transition Chip Enable High to Write Enable High Output Enable High to Chip Enable Low Chip Enable High to Output Enable Low Chip Enable High to Chip Enable Low Chip Enable Low to Chip Enable High W = VIL W = VIL W = VIL Test Condition 90 - 110 W = VIL W = VIL Min Min Min Min Min Max Min Min Min Min Min Min 50 50 0 0 0 500 0 0 20 35 30 70 ns ns ns ns ns ns ns ns ns ns ns ns Unit
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Figure 13. Reset, Power-Down and Power-Up AC Waveform
W tPHWL E2, E1, E0(1), G
DQ0-DQ15 tPHQV STS (Ready/Busy mode) tPLBH RP tVDHPH VDD, VDDQ Power-Up and Reset Reset during Program or Erase
AI06217b
tPLPH
Note: 1. VIH = Device Disabled (first edge of E0, E1 or E2), VIL = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more details.
Table 19. Reset, Power-Down and Power-Up AC Characteristics
M58LW032D Symbol tPHQV tPHWL tPLPH tPLBH tVDHPH Parameter 90 Reset/Power-Down High to Data Valid Reset/Power-Down High to Write Enable Low Reset/Power-Down Low to Reset/Power-Down High Reset/Power-Down Low to Status/(Ready/Busy) High Supply Voltages High to Reset/Power-Down High Max Max Min Max Min 130 1 100 30 0 110 150 1 100 30 0 ns s ns s s Unit
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PACKAGE MECHANICAL Figure 14. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Outline
A2
1 N
e E B
N/2
D1 D
A CP
DIE
C
TSOP-a
A1
L
Note: Drawing is not to scale.
Table 20. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Mechanical Data
mm Symbol Typ A A1 A2 B C D D1 E e L N CP 0.50 0.05 0.95 0.17 0.10 19.80 18.30 13.90 - 0.50 0 56 0.10 Min Max 1.20 0.15 1.05 0.27 0.21 20.20 18.50 14.10 - 0.70 5 0.0197 0.0020 0.0374 0.0067 0.0039 0.7795 0.7205 0.5472 - 0.0197 0 56 0.0039 Typ Min Max 0.0472 0.0059 0.0413 0.0106 0.0083 0.7953 0.7283 0.5551 - 0.0276 5 inches
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Figure 15. TBGA64 - 10x13mm, 8 x 8 ball array 1mm pitch, Package Outline
D FD FE D1 SD
E
E1
SE
ddd BALL "A1"
A
e
b A1
A2
BGA-Z23
Note: Drawing is not to scale.
Table 21. TBGA64 - 10x13mm, 8 x 8 ball array, 1 mm pitch, Package Mechanical Data
millimeters Symbol Typ A A1 A2 b D D1 ddd e E E1 FD FE SD SE 1.000 13.000 7.000 1.500 3.000 0.500 0.500 - 12.900 - - - - - 10.000 7.000 0.400 9.900 - 0.300 0.200 Min Max 1.200 0.350 0.850 0.500 10.100 - 0.100 - 13.100 - - - - - 0.0394 0.5118 0.2756 0.0591 0.1181 0.0197 0.0197 - 0.5079 - - - - - 0.3937 0.2756 0.0157 0.3898 - 0.0118 0.0079 Typ Min Max 0.0472 0.0138 0.0335 0.0197 0.3976 - 0.0039 - 0.5157 - - - - - inches
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PART NUMBERING Table 22. Ordering Information Scheme
Example: Device Type M58 Architecture L = Page Mode Operating Voltage W = VDD = VDDQ = 2.7V to 3.6V Device Function 032D = 32 Mbit (x8, x16), Uniform Block Speed 110 = 110ns 90 = 90ns Package N = TSOP56: 14 x 20 mm ZA = TBGA64: 10 x 13 mm, 1mm pitch Temperature Range 1 = 0 to 70 C 6 = -40 to 85 C Option Blank = Standard Packing T = Tape & Reel Packing E = Lead-free Package, Standard Packing F = Lead-free Package, Tape & Reel Packing M58LW032D 110 N 1 T
Note: Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
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APPENDIX A. BLOCK ADDRESS TABLE Table 23. Block Addresses
Block Number 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 Address Range (x8 Bus Width) 3E0000h-3FFFFFh 3C0000h-3DFFFFh 3A0000h-3BFFFFh 380000h-39FFFFh 360000h-37FFFFh 340000h-35FFFFh 320000h-33FFFFh 300000h-31FFFFh 2E0000h-2FFFFFh 2C0000h-2DFFFFh 2A0000h-2BFFFFh 280000h-29FFFFh 260000h-27FFFFh 240000h-25FFFFh 220000h-23FFFFh 200000h-21FFFFh 1E0000h-1FFFFFh 1C0000h-1DFFFFh 1A0000h-1BFFFFh 180000h-19FFFFh 160000h-17FFFFh 140000h-15FFFFh 120000h-13FFFFh 100000h-11FFFFh 0E0000h-0FFFFFh 0C0000h-0DFFFFh 0A0000h-0BFFFFh 080000h-09FFFFh 060000h-07FFFFh 040000h-05FFFFh 020000h-03FFFFh 000000h-01FFFFh Address Range (x16 Bus Width) 1F0000h-1FFFFFh 1E0000h-1EFFFFh 1D0000h-1DFFFFh 1C0000h-1CFFFFh 1B0000h-1BFFFFh 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh 120000h-12FFFFh 110000h-11FFFFh 100000h-10FFFFh 0F0000h-0FFFFFh 0E0000h-0EFFFFh 0D0000h-0DFFFFh 0C0000h-0CFFFFh 0B0000h-0BFFFFh 0A0000h-0AFFFFh 090000h-09FFFFh 080000h-08FFFFh 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 000000h-00FFFFh
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APPENDIX B. COMMON FLASH INTERFACE - CFI The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the deTable 24. Query Structure Overview
Address x16 0000h 0001h 0010h 001Bh 0027h P(h)(1) A(h)(2) (SBA+02)h
Note: 1. 2. 3. 4.
vice, enabling the software to upgrade itself when necessary. When the CFI Query Command (RCFI) is issued the device enters CFI Query mode and the data structure is read from the memory. Tables 24, 25, 26, 27, 28 and 29 show the addresses used to retrieve the data.
x8(4) 00h 02h 20h 36h 4Eh
Sub-section Name
Description Manufacturer Code Device Code
CFI Query Identification String System Interface Information Device Geometry Definition Primary Algorithm-specific Extended Query Table Alternate Algorithm-specific Extended Query Table Block Status Register
Command set ID and algorithm data offset Device timing and voltage information Flash memory layout Additional information specific to the Primary Algorithm (optional) Additional information specific to the Alternate Algorithm (optional) Block-related Information
Offset 15h defines P which points to the Primary Algorithm Extended Query Address Table. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table. SBA is the Start Base Address for each block. In x8 mode, A0 must be set to VIL, otherwise 00h will be output.
Table 25. CFI - Query Address and Data Output
Address Data x16 0010h 0011h 0012h 0013h 0014h 0015h 0016h 0017h 0018h 0019h 001Ah(2) x8(3) 20h 22h 24h 26h 28h 2Ah 2Ch 2Eh 30h 32h 34h 51h 52h 59h 01h 00h 31h Primary algorithm extended Query Address Table: P(h) 00h 00h 00h 00h Alternate Algorithm Extended Query address Table 00h Alternate Vendor: Command Set and Control Interface ID Code "Q" "R" "Y" Query ASCII String 51h; "Q" 52h; "R" 59h; "Y" Description
Primary Vendor: Command Set and Control Interface ID Code
Note: 1. Query Data are always presented on DQ7-DQ0. DQ15-DQ8 are set to '0'. 2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table. 3. In x8 mode, A0 must be set to VIL, otherwise 00h will be output.
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Table 26. CFI - Device Voltage and Timing Specification
Address Data x16 001Bh 001Ch 001Dh 001Eh 001Fh 0020h 0021h 0022h 0023h 0024h 0025h 0026h
Note: 1. 2. 3. 4.
Description VDD Min, 2.7V VDD max, 3.6V VPP min - Not Available VPP max - Not Available 2n s typical time-out for Word, DWord prog - Not Available 2n s, typical time-out for max buffer write 2n ms, typical time-out for Erase Block 2n ms, typical time-out for chip erase - Not Available 2n x typical for Word Dword time-out max - Not Available 2n x typical for buffer write time-out max 2n x typical for individual block erase time-out maximum 2n x typical for chip erase max time-out - Not Available
x8(4) 36h 38h 3Ah 3Ch 3Eh 40h 42h 44h 46h 48h 4Ah 4Ch 27h (1) 36h (1) 00h (2) 00h (2) 04h 08h 0Ah 00h (3) 04h 04h 04h 00h (3)
Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV. Not supported. In x8 mode, A0 must be set to VIL, otherwise 00h will be output.
Table 27. Device Geometry Definition
Address Data x16 0027h 0028h 0029h 002Ah 002Bh 002Ch 002Dh 002Eh 002Fh 0030h x8(1) 4Eh 50h 52h 54h 56h 58h 5Ah 5Ch 5Eh 60h 16h 02h 00h 05h 00h 01h 1Fh Number (n-1) of Erase Blocks of identical size; n=64 00h 00h 02h Erase Block Region Information x 256 bytes per Erase block (128K bytes) n where 2n is number of bytes memory Size Device Interface Organization Sync./Async. Maximum number of bytes in Write Buffer, 2n Bit7-0 = number of Erase Block Regions in device Description
Note: 1. In x8 mode, A0 must be set to VIL, otherwise 00h will be output.
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Table 28. Block Status Register
Address bit0 1 (BA+2)h(1,2) 0 bit1 1 bit7-2 0 Last erase operation not ended successfully (3) Reserved for future features Block Protected Last erase operation ended successfully (3) Data 0 Selected Block Information Block Unprotected
Note: 1. BA specifies the block address location, A21-A17. 2. In x8 mode, A0 must be set to VIL, otherwise 00h will be output. 3. Not Supported.
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Table 29. Extended Query information
Address offset (P)h (P+1)h (P+2)h (P+3)h (P+4)h (P+5)h (P+6)h (P+7)h x16 0031h 0032h 0033h 0034h 0035h 0036h 0037h 0038h x8(2) 62h 64h 66h 68h 6Ah 6Ch 6Eh 70h Data (Hex) 50h 52h 49h 31h 31h CEh 00h 00h "P" "R" "Y" Major version number Minor version number Optional Feature: (1=yes, 0=no) bit0, Chip Erase Supported (0=no) bit1, Suspend Erase Supported (1=yes) bit2, Suspend Program Supported (1=yes) bit3, Protect/Unprotect Supported (1=yes) bit4, Queue Erase Supported (0=no) bit5, Instant Individual Block locking (0=no) bit6, Protection bits supported (1=yes) bit7, Page Read supported (1=yes) bit8, Synchronous Read supported (0 =no) bits 9 to 31 reserved for future use Function allowed after Suspend: Program allowed after Erase Suspend (1=yes) Bits 7-1 reserved for future use Block Status Register bit0, Block Protect Bit status active (1=yes) bit1, Block Lock-Down Bit status active (not supported) bits 2 to 15 Reserved for future use VDD OPTIMUM Program/Erase voltage conditions VPP OPTIMUM Program/Erase voltage conditions OTP protection: No. of Protection Register fields Protection Register's start address, least significant bits Protection Register's start address, most significant bits n where 2n is number of factory reprogrammed bytes n where 2n is number of user programmable bytes Page Read: 2n Bytes (n = bits 0-7) Synchronous mode configuration fields Reserved for future use Query ASCII string - Extended Table Description
(P+8)h
0039h
72h
00h
(P+9)h (P+A)h (P+B)h (P+C)h (P+D)h (P+E)h (P+F)h (P+10)h (P+11)h (P+12)h (P+13)h (P+14)h (P+15)h
003Ah 003Bh 003Ch 003Dh 003Eh 003Fh 0040h 0041h 0042h 0043h 0044h 0045h 0046h
74h 76h 78h 7Ah 7Ch 7Eh 80h 82h 84h 86h 88h 8Ah 8Ch
01h 01h 00h 33h 00h 01h 80h 00h 03h 03h 03h 00h
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV. 2. In x8 mode, A0 must be set to VIL, otherwise 00h will be output.
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APPENDIX C. FLOW CHARTS Figure 16. Write to Buffer and Program Flowchart and Pseudo Code
Start Write to Buffer E8h Command, Block Address
Read Status Register NO SR7 = 1 YES Note 1: N+1 is number of Words to be programmed Write N(1), Block Address Try Again Later Write Buffer Data, Start Address NO Write to Buffer Timeout YES
X=0
X=N NO Note 2: Next Program Address must have same A5-A21.
YES
Write Next Buffer Data, Next Program Address(2)
X=X+1
Program Buffer to Flash Confirm D0h
Read Status Register
SR7 = 1 YES Note 3: A full Status Register Check must be done to check the program operation's success. Full Status Register Check(3)
NO
End
AI05511
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Figure 17. Program Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Write 70h
Program/Erase Suspend Command: - write B0h - write 70h do: - read status register
Read Status Register
SR7 = 1 YES SR2 = 1 YES Write FFh
NO
while SR7 = 1
NO
Program Complete
If SR2 = 0, Program completed
Read Memory Array command: - write FFh - one or more data reads from other blocks
Read data from another block
Write D0h
Write FFh
Program Continues
Read Data
Program Erase Resume Command: - write D0h to resume erasure - if the program operation completed then this is not necessary. The device returns to Read Array as normal (as if the Program/Erase Suspend command was not issued).
AI00612b
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Figure 18. Erase Flowchart and Pseudo Code
Start
Write 20h
Write D0h to Block Address
Erase command: - write 20h - write D0h to Block Address (A12-A17) (memory enters read Status Register after the Erase command)
Read Status Register
NO Suspend
YES
do: - read status register - if Program/Erase Suspend command given execute suspend erase loop
SR7 = 1
NO
Suspend Loop
while SR7 = 1
YES SR3 = 0 YES SR4, SR5 = 0 YES SR5 = 0 YES SR1 = 0 YES End
AI00613C
NO
VPEN Invalid Error (1)
If SR3 = 1, VPEN invalid error: - error handler
NO
Command Sequence Error
If SR4, SR5 = 1, Command Sequence error: - error handler
NO
Erase Error (1)
If SR5 = 1, Erase error: - error handler
NO
Erase to Protected Block Error
If SR1 = 1, Erase to Protected Block Error: - error handler
Note: 1. If an error is found, the Status Register must be cleared (Clear Status Register Command) before further Program or Erase operations.
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Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Write 70h
Program/Erase Suspend Command: - write B0h - write 70h do: - read status register
Read Status Register
SR7 = 1 YES SR6 = 1 YES Write FFh
NO
while SR7 = 1
NO
Erase Complete
If SR6 = 0, Erase completed
Read Memory Array command: - write FFh - one or more data reads from other blocks
Read data from another block or Program
Write D0h
Write FFh
Erase Continues
Read Data
Program/Erase Resume command: - write D0h to resume the Erase operation - if the Program operation completed then this is not necessary. The device returns to Read mode as normal (as if the Program/Erase suspend was not issued).
AI00615b
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M58LW032D
Figure 20. Block Protect Flowchart and Pseudo Code
Start
Write 60h Block Address
Block Protect Command - write 60h, Block Adress - write 01h, Block Adress
Write 01h Block Address
Read Status Register
do: - read status register
SR7 = 1
NO
while SR7 = 1
YES YES VPEN Invalid Error If SR3 = 1, VPEN Invalid Error
SR3 = 1 NO
YES SR4, SR5 = 1,1 NO YES SR4 = 1 NO
Invalid Command Sequence Error
If SR4 = 1, SR5 = 1 Invalid Command Sequence Error
Block Protect Error
If SR4 = 1, Block Protect Error
Write FFh
Read Memory Array Command: - write FFh
Block Protect Sucessful
AI06157b
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M58LW032D
Figure 21. Block Unprotect Flowchart and Pseudo Code
Start
Write 60h
Blocks Unprotect Command - write 60h, Block Adress - write D0h, Block Adress
Write D0h
Read Status Register
do: - read status register
SR7 = 1
NO
while SR7 = 1
YES YES
SR3 = 1 NO
VPEN Invalid Error
If SR3 = 1, VPEN Invalid Error
YES SR4, SR5 = 1,1 NO YES SR5 = 1 NO
Invalid Command Sequence Error
If SR4 = 1, SR5 = 1 Invalid Command Sequence Error
Blocks Unprotect Error
If SR5 = 1, Blocks Unprotect Error
Write FFh
Read Memory Array Command: - write FFh
Blocks Unprotect Sucessful
AI06158b
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M58LW032D
Figure 22. Protection Register Program Flowchart and Pseudo Code
Start
Write C0h
Write PR Address, PR Data
Protection Register Program Command - write C0h - write Protection Register Address, Protection Register Data
Read Status Register
do: - read status register
SR7 = 1
NO
while SR7 = 1
YES YES SR3, SR4 = 1,1 NO YES SR1, SR4 = 0,1 NO YES SR1, SR4 = 1,1 NO If SR3 = 1, SR4 = 1 VPEN Invalid Error
VPEN Invalid Error
Protection Register Program Error
If SR1 = 0, SR4 = 1 Protection Register Program Error
Protection Register Program Error
If SR1 = 1, SR4 = 1 Program Error due to Protection Register Protection
Write FFh
Read Memory Array Command: - write FFh
PR Program Sucessful
AI06159b
Note: PR = Protection Register
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M58LW032D
Figure 23. Command Interface and Program Erase Controller Flowchart (a)
WAIT FOR COMMAND WRITE
90h YES READ SIGNATURE
NO
98h YES CFI QUERY
NO
70h YES READ STATUS
NO
50h YES CLEAR STATUS
NO
READ ARRAY
E8h YES PROGRAM BUFFER LOAD
NO
20h(1) YES ERASE SET-UP
NO
FFh YES
NO
NO
D0h YES C A NO
PROGRAM COMMAND ERROR
D0h YES
ERASE COMMAND ERROR
B Note 1. The Erase command (20h) can only be issued if the flash is not already in Erase Suspend.
AI03618
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M58LW032D
Figure 24. Command Interface and Program Erase Controller Flowchart (b)
B A
ERASE
(READ STATUS)
READ STATUS
YES
Program/Erase Controller READY Status bit in the Status Register ? NO
READ ARRAY YES FFh NO
B0h YES
NO
READ STATUS ERASE SUSPEND
NO ERASE SUSPENDED YES
READY ? NO
WAIT FOR COMMAND WRITE
YES
READ STATUS
READ STATUS
YES
70h NO
READ SIGNATURE
YES
90h NO
CFI QUERY
YES
98h NO
PROGRAM BUFFER LOAD
YES
E8h
NO PROGRAM COMMAND ERROR NO D0h D0h NO READ ARRAY
AI03619
YES
READ STATUS
(ERASE RESUME)
YES c
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M58LW032D
Figure 25. Command Interface and Program Erase Controller Flowchart (c).
B C
PROGRAM
(READ STATUS)
READ STATUS READ ARRAY
YES
READY ? NO
Program/Erase Controller Status bit in the Status Register
B0h YES NO FFh PROGRAM SUSPEND NO PROGRAM SUSPENDED YES YES
NO
READ STATUS
READY ? NO
WAIT FOR COMMAND WRITE
YES
READ STATUS
READ STATUS
YES
70h NO
READ SIGNATURE
YES
90h NO
CFI QUERY
YES
98h NO
READ ARRAY
NO
D0h
YES
READ STATUS
(PROGRAM RESUME)
AI00618
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M58LW032D
REVISION HISTORY Table 30. Document Revision History
Date 04-Jun-2002 Version -01 First Issue Revision numbering modified: a minor revision will be indicated by incrementing the digit after the dot, and a major revision, by incrementing the digit before the dot. (revision version 01 becomes 1.0). Figure 5 modified. tWHDX and tWHAX modified in Table 17. Device Code changed, Word Effective Programming Time modified, VDDQ range modified (esp. in Tables 12 and 22, and VDDQ removed from note 1 below Table 9). Block Erase and Program Write Buffer Time parameters modified in Table 9. 90ns Speed Class added (Table 15, 16, 17, 18, 19 and 22 modified accordingly). Figure 2, Logic Diagram modified. VDD, VDDQ, VSS and VSSQ pin descriptions modified. Document status changed from Product Preview to Preliminary Data. A0 Address Line described separately from others (A1-A21) in Table 1 and in "SIGNAL DESCRIPTIONS" paragraph. Address Lines modified in Table 3, Bus Operations. Byte signal added to Figure 9, Bus Read AC Waveforms, timings tELBL, tBLQV and tBLQZ added to Table 15, Bus Read AC Characteristics, timings tAVLH and tELLH removed from Table 18, Write AC Characteristics, Chip Enable Controlled. Chip Enable Controlled. "Write 70h" removed from flowchart Figures 17 and 19. Table 3, Bus operations, clarified. REVISION HISTORY moved to after the appendices. Table 9, Program, Erase Times and Program Erase Endurance Cycles table modified. Table 6, Read Electronic Signature table clarified. Certain DU connections changed to NC in Table 4, TBGA64 Connections (Top view through package). x8 Address modified in Table 24, Query Structure Overview. Note regarding A0 value in x8 mode added to all CFI Tables. Block Protect setup command address modified in Table 4, Commands. Data and Descriptions clarified in CFI Table 29, Extended Query information. IOSC parameter added to Absolute Maximum Ratings table. IDD and VLKO clarified and IDDO and VPENH parameters added to DC Characteristics table. tPHWL parameter added to Reset, Power-Down and Power-Up AC Waveforms figure and Characteristics table. Summary Description clarified, Bus Operations clarified, READ MODES section added, Status Register bit nomenclature modified, VPEN Invalid Error clarified in Flowcharts. Lead-free packing options added to Ordering Information Scheme. tEHAX and tEHDX minimum values modified in Table 18, Write AC Characteristics, Chip Enable Controlled. Full datasheet. Revision Details
16-Jun-2002
1.1
06-Aug-2002
2.0
14-Oct-2002
2.1
16-Dec-2002
2.2
30-May-2003
2.3
12-Sep-2003
2.4
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M58LW032D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2003 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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